(China (Mainland))
Product Summary
The STQ1NC45R-AW is a power MOSFET obtained through an extreme optimization of ST’s well established strip-based PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The STQ1NC45R-AW is suitable for switch mode low power supplies (smps), low power, low cost cfl (compact fluorescent lamps) and low power battery chargers.
Parametrics
STQ1NC45R-AW absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 450 V; (2)VDGR, Drain-gate Voltage (RGS =20kΩ): 450 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuos) at TC = 25℃: 0.5 A; (5)ID, Drain Current (continuos) at TC = 100℃: 0.315 A; (6)IDM, Drain Current (pulsed): 6 2 A; (7)PTOT, Total Dissipation at TC = 25℃: 3.1 W; (8)Derating Factor: 0.025 W/℃; (9)dv/dt, Peak Diode Recovery voltage slope 3 V/ns; (10)Tj, Operating Junction Temperature: -65 to 150℃; (11)Tstg, Storage Temperature: -65 to 150℃.
Features
STQ1NC45R-AW features: (1)typical RDS(on) = 4.1Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)new high voltage benchmark.
Diagrams
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