(China (Mainland))
Product Summary
The UPD65636GB-Y12-9EU is an ultra-high performance, sub-micron effective channel length CMOS product which is created for high-integration ASIC applications. It includes 1.0-micron silicon-gate CMOS technology and three-layer and two-layer metallization.
Parametrics
Absolute maximum ratings: (1)power supply voltage, VDD: -0.5 to 6.5 V; (2)input/output voltage, VI/VO: -0.5 V to VDD+0.5 V; (3)latch-up current, ILATCH: >1 A typ; (4)output current, IO: 4.5mA drive: 10mA, 9mA drive: 20 mA; (5)operating temperature: -40 to +85℃; (6)storage temperature: -65 to 150℃.
Features
Features: (1)channellessm 1 μm CMOS high-density architecture; (2)variable output drive: 4.5, 9.0, 13.5, or 18.0 mA; (3)slew rate output buffers; (4)free size memory blocks to 64 kbytes; (5)powerful block library with more than 400 macros; (6)3V characterized block library; (7)new 0.65 mm 184-pin plastic QFP for cost effective designs; (8)high I/O to gate ratio for CMOS-6V and CMOS-6X.
Diagrams
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Negotiable |
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UPD6124A |
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Negotiable |
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UPD6125A |
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Negotiable |
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UPD6132 |
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Negotiable |
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UPD6133 |
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Negotiable |
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