(China (Mainland))
Product Summary
The SI2302ADS-T1-E3 is an N-Channel MOSFET.
Parametrics
SI2302ADS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: 8V; (3)Continuous Drain Current (T 150_C)TA= 25_C I 2.4 2.1 TJ = TA= 70_C ID: 1.9A; (4)Pulsed Drain Currenta IDM: 10A; (5)Continuous Source Current (Diode Conduction)a IS: 0.94A; (6)Power Dissipationa TA= 25℃ P: 0.9W; (7)Operating Junction and Storage Temperature Range: -55 to 150℃.
Features
SI2302ADS-T1-E3 features: (1)VDS: 20V; (2)rDS(on): 0.060Ω @ VGS = 4.5 V; (3)ID: 2.4A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI2302ADS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.4A 0.06Ohm |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SI2300 |
Other |
|
Data Sheet |
Negotiable |
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|
SI2300DS-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 3.6A N-CH MOSFET |
Data Sheet |
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SI2301 |
Micro Commercial Components (MCC) |
MOSFET -20V -2.8A |
Data Sheet |
|
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Si2301ADS |
Other |
|
Data Sheet |
Negotiable |
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|
SI2301ADS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
|
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|
SI2301ADS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
Negotiable |
|
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